| PART |
Description |
Maker |
| RF51171 |
3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER
|
RF Micro Devices
|
| CHA6015-99F |
2-8GHz High Power Amplifier
|
United Monolithic Semic...
|
| NBB-400-D |
CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 8GHz
|
RF Micro Devices, Inc.
|
| LMA116 |
2-10GHz MESFET Amplifier 2 - 10GHz的场效应管放大器
|
United Monolithic Semiconductors GmbH
FILTRONIC[Filtronic Compound Semiconductors]
|
| MAX11014BGTM |
Automatic RF MESFET Amplifier Drain-Current Controllers
|
MAXIM - Dallas Semiconductor
|
| MAX11014 |
Automatic RF MESFET Amplifier Drain-Current Controllers
|
Maxim Integrated Products
|
| NE6500379A-T1 |
3W L / S-BAND POWER GaAs MESFET
3W L, S-BAND POWER GaAs MESFET 3W升，S波段功率GaAs MESFET
|
NEC Corp.
NEC, Corp.
|
| RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大
Single-band power amplifiers
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
| NE985100 NE985200 NE985400 |
100 mA, 2 W, K-band power GaAs MESFET
200 mA, 2 W, K-band power GaAs MESFET
400 mA, 2 W, K-band power GaAs MESFET
|
NEC
|
